AMDp2 - 5
نویسندگان
چکیده
High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al2O3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.
منابع مشابه
(P\351rez Ariza, C. \(2007\). El ...)
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